E-journal for electrical and electronic engineers


Vol. 5, Nr 1 (15) 2014

Publ. 30.03.2014

High Efficiency Power Converter Systems with Silicon Carbide Transistors

s. 60-72 DOI: 10.17274/AEZ.2014.15.04


Semiconductor power devices made from silicon carbide (SiC) reached a level of technology enabling their widespread use in power converters. In this paper the author presents the recent developments concerning SiC-based power converters as well as describing some results of the research carried out at the Gdansk University of Technology. The paper describes the static and dynamic properties of investigated SiC transistors and presents selected issues related to their implementation in power converters. The examples of realized SiC-based power converters with powers up to 40 kW, e.g. for high speed induction motor drives and small wind turbines have also been presented in the paper.


silicon carbide, SiC MOSFET, SiC JFET, power converter, gate driver circuits



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